| PART |
Description |
Maker |
| MRF18030BLSR3 MRF18030BSR3 MRF18030BR3 MRF18030BLR |
GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| MRF18085A MRF18085AR3 MRF18085ALSR3 |
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MRF18085A, MRF18085AR3, MRF18085ALSR3 GSM/GSM EDGE, 1.8-1.88 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
http://
MOTOROLA[Motorola, Inc]
|
| MW4IC915MBR1 MW4IC915GMBR1 MW4IC915 |
MW4IC915MBR1. MW4IC915GMBR1 GSM/GSM EDGE. N-CDMA. W-CDMA. 860-960 MHz. 15 W. 26 V RF LDMOS Wideband Integrated Power Amplifiers MW4IC915MBR1MW4IC915GMBR1的GSM / GSM的EDGE网络 - CDMA技术。的W - CDMA860-960兆赫15日布什26最小输LDMOS的宽带集成功率放大器
|
飞思卡尔半导体(中国)有限公司
MOTOROLA[Motorola, Inc]
|
| EDG0308 EDG0408 GSM0308 GSM0408 GSM0306 |
Utilizes leading-edge GSM/GPRS/EDGE silicon
|
List of Unclassifed Manufacturers
|
| MRF9100R3 MRF9100 MRF9100SR3 |
GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF9100, MRF9100R3, MRF9100SR3 GSM/EDGE 900 MHz, 110 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| SKY74117 |
RF Transceiver for Quad-Band GSM, GPRS, and EDGE Applications
|
Skyworks Solutions
|
| TQM7M5005 |
GSM/EDGE Multi-mode Power Amplifier Module
|
TriQuint Semiconductor
|
| TQM7M5002 |
Quad-Band GSM/EDGE Polar Power Amplifier Module
|
TriQuint Semiconductor
|
| LT5568-2 LT5568-2EUF-PBF LT5568-2EUF-TRPBF |
GSM/EDGE Optimized, High Linearity Direct Quadrature Modulator
|
Linear Technology
|
| SKY77354-13 |
Power Amplifier Module for Quad-Band GSM / GPRS / EDGE
|
Skyworks Solutions Inc.
|
